Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction

Abstract

Crystalline NiO and doped with rare earth lutetium oxide (Lu₂O₃) at (6%wt)., have been prepared by pulsed laser deposition (PLD), The Q-switched Nd:YAG laser beam was incident at an angle of 45° on the target surface, and the energy of the laser was 500 mJ, wavelengths of 532nm, and frequency 6Hz. XRD pattern shows all doped and undoped films are polycrystalline, and cubic structure. The 200nm thin NiO showed an average optical energy band gap of 3.4eV, and increase with doping at 6% Lu₂O₃. The Hall Effect measurements confirmed that holes were predominant charges in the conduction process (i.e p-type). D.C conductivity measurements with temp-erature (T), show that the films prepared have the two activation energy increase with doping of Lu₂O₃. Capacitance-voltage (C-V) measurements were performed for films prepared, where the built in voltage has been determined and decreases in value when doping with the rare earth. In this study we assumed an energy band diagram for p-NiO /n-Si heterojunction.