Synthesis and Characterization of a Nano (CdO)0.94:(In2O3) 0.06 / Si gas Sensor

Authors

  • M. F. A. Alias Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq
  • H. A. Abdulrahman Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq

DOI:

https://doi.org/10.24996/ijs.2021.62.11.7

Keywords:

Gas nanosensors, (CdO)0.94:(In2O3)0.06 thin film, morphological properties, electrical property and pulsed laser deposition technique

Abstract

In this work, a (CdO)0.94:(In2O3)0.06 film was developed on a glass substrate using Q- switching pulse laser beam (Nd:YAG; wavelength 1064 nm). The quantitative elemental analysis of the (CdO)0.94:(In2O3)0.06 thin film was achieved using energy dispersive X- ray diffraction (EDX). The topological and morphological properties of the deposited thin film were investigated using atomic force microscope (AFM) and field emission scan electron microscopy (FESEM). The I-V characteristic and Hall effect of (CdO)0.94 :(In2O3)0.06 thin films were used  to  study the electrical properties. The gas sensor properties of the film prepared on n-Si were investigated for oxidization and reduction gases.

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Published

2021-11-30

How to Cite

Alias, M. F. A. ., & Abdulrahman, H. A. . (2021). Synthesis and Characterization of a Nano (CdO)0.94:(In2O3) 0.06 / Si gas Sensor. Iraqi Journal of Science, 62(11), 3858–3870. https://doi.org/10.24996/ijs.2021.62.11.7

Issue

Section

Physics