Synthesis and Characterization of a Nano (CdO)0.94:(In2O3) 0.06 / Si gas Sensor

M. F. A.  Alias; H. A.  Abdulrahman

doi:10.24996/ijs.2021.62.11.7

Authors

M. F. A. Alias Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq
H. A. Abdulrahman Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq

DOI:

https://doi.org/10.24996/ijs.2021.62.11.7

Keywords:

Gas nanosensors, (CdO)0.94:(In2O3)0.06 thin film, morphological properties, electrical property and pulsed laser deposition technique

Abstract

In this work, a (CdO)_0.94:(In₂O₃)_0.06film was developed on a glass substrate using Q- switching pulse laser beam (Nd:YAG; wavelength 1064 nm). The quantitative elemental analysis of the (CdO)_0.94:(In₂O₃)_0.06thin film was achieved using energy dispersive X- ray diffraction (EDX). The topological and morphological properties of the deposited thin film were investigated using atomic force microscope (AFM) and field emission scan electron microscopy (FESEM). The I-V characteristic and Hall effect of (CdO)_0.94:(In₂O₃)_0.06 thin films were used to study the electrical properties. The gas sensor properties of the film prepared on n-Si were investigated for oxidization and reduction gases.