Designing A Zener Diode Using Ag2O(1-X)Zno(X)/Psi Structures Deposited by Laser Induced Plasma Technique

  • Raied K. Jamal Physic Department of Physic, College of Science, University of Baghdad, Iraq
  • Falah Hassen Ali Physic Department of Physic, College of Science, University of Baghdad, Iraq
  • Mohammed M. Hameed Ministry of Higher Education and Scientific Research
  • Kadhim Abdulwahid Aadim Physic Department of Physic, College of Science, University of Baghdad, Iraq
Keywords: ZnO nanostructure, Ag2O nanostructure, Zener diode, laser induced plasma

Abstract

In this paper Zener diode was designed by mixing three mixing ratios of Ag2O(1-x)ZnO(x), where x is 0.5, 0.3, and 0.1, that are deposited on a p-type porous silicon using laser induced plasma technique at room temperature (RT). The results of the Zener diode showed a decrease in knee and Zener voltage when the mixing ratio of Ag2O(1-x)ZnO(x) structure was increased. Nanofilms of 200nm thickness were prepared from pure ZnO and Ag2O as well as Ag2O(1-x)ZnO(x) with three maxing ratios and deposited on glass slides at RT to analyze the structure and optical properties. The structures of Ag2O and Ag2O(1-x)ZnO(x) showed high absorbance in the visible region with redshift in spectra when the mixing ratio was increased, while ZnO had a high absorbance  in the ultraviolet region. It is concluded that when the value of x increases the energy gap value for the Ag2O(1-x)ZnO(x) structure decreases.

Published
2020-05-28
How to Cite
Jamal, R. K., Ali, F. H., Hameed, M. M., & Aadim, K. A. (2020). Designing A Zener Diode Using Ag2O(1-X)Zno(X)/Psi Structures Deposited by Laser Induced Plasma Technique. Iraqi Journal of Science, 61(5), 1032-1039. https://doi.org/10.24996/ijs.2020.61.5.12
Section
Physics