Designing A Zener Diode Using Ag2O(1-X)Zno(X)/Psi Structures Deposited by Laser Induced Plasma Technique

Raied K.  Jamal; Falah Hassen  Ali; Mohammed M.  Hameed; Kadhim Abdulwahid  Aadim

doi:10.24996/ijs.2020.61.5.12

Authors

Raied K. Jamal Physic Department of Physic, College of Science, University of Baghdad, Iraq
Falah Hassen Ali Physic Department of Physic, College of Science, University of Baghdad, Iraq
Mohammed M. Hameed Ministry of Higher Education and Scientific Research
Kadhim Abdulwahid Aadim Physic Department of Physic, College of Science, University of Baghdad, Iraq

DOI:

https://doi.org/10.24996/ijs.2020.61.5.12

Keywords:

ZnO nanostructure, Ag2O nanostructure, Zener diode, laser induced plasma

Abstract

In this paper Zener diode was designed by mixing three mixing ratios of Ag₂O_(1-x)ZnO_(x), where x is 0.5, 0.3, and 0.1, that are deposited on a p-type porous silicon using laser induced plasma technique at room temperature (RT). The results of the Zener diode showed a decrease in knee and Zener voltage when the mixing ratio of Ag₂O_(1-x)ZnO_(x) structure was increased. Nanofilms of 200nm thickness were prepared from pure ZnO and Ag₂O as well as Ag₂O_(1-x)ZnO_(x) with three maxing ratios and deposited on glass slides at RT to analyze the structure and optical properties. The structures of Ag₂O and Ag₂O_(1-x)ZnO_(x) showed high absorbance in the visible region with redshift in spectra when the mixing ratio was increased, while ZnO had a high absorbance in the ultraviolet region. It is concluded that when the value of x increases the energy gap value for the Ag₂O_(1-x)ZnO_(x) structure decreases.