Efficient CuInSSe-based solar cell simulated by SCAPS-1D software: role of 30% efficiency

Ameer Khamass; Burak   Kadem; R.  Alfahed; Mohammed   Al Hashimi

doi:10.24996/ijs.2026.67.3.%g

Authors

Ameer Khamass University of Baghdad-College of Science
Burak Kadem College of Science, Al-Karkh University of Science, Baghdad, Iraq
R. Alfahed Al-Nahrain Renewable Energy Research Center, Al-Nahrain University, Jadriya, Baghdad, Iraq
Mohammed Al Hashimi College of Education, University of Misan, Misan, Iraq

DOI:

https://doi.org/10.24996/ijs.2026.67.3.%25g

Keywords:

SCAPS-1D, CISSe, Buffer layer, Thin film solar cell, CdS

Abstract

Copper Indium Sulfur-Selenide (CISSe) based solar cell is examined by optimization several aspects including absorber layer thickness, buffer layer thickness, window layer thickness, working temperatures and energy band gap values. The optimization of these factors has resulted in optimum absorber layer thickness of 3000 nm, optimum CdS thickness of 10 nm, optimum ZnO thickness of 10 nm, optimum working temperature of 300 K and optimum energy band gap of 1.5 eV. The best device performance consisting of these optimum values results in a PCE of 30.51% correlated to FF of 83.7%, J_SC of 47.188 mA.cm^-2 and V_OC of 0.773 Volt. Results are promising and pave the way towards high PCE of CISSe-based solar. However, there might be a differences when these factors are applied in an experimental procedure due to the preparation conditions.