FTIR Analysis and Characterizations of (SnO2:Ga2O3, CeO2 /Cu2S/c-pSi) Heterojunctions Solar Cells

Maab A. Abood; Bushra A. Hasan

doi:10.24996/ijs.2023.64.5.16

Authors

Maab A. Abood Department of physics, collage of science, university of Baghdad, Baghdad, Iraq
Bushra A. Hasan Department of physics, collage of science, university of Baghdad, Baghdad, Iraq

DOI:

https://doi.org/10.24996/ijs.2023.64.5.16

Keywords:

solar cell, pulsed laser deposition, SnO2 thin films, FTIR spectrum

Abstract

Compounds from tin oxide doped with gallium oxide and cerium oxide were synthesized. Thin films from (SnO₂:Ga₂O₃,CeO₂) with different doping ratios were prepared on glass and single crystal silicon as substrates with the use of the pulsed laser deposition technique. The results of FTIR spectrums analysis was presented. Varies heterojunctions were fabricated from (SnO₂:Ga₂O₃,CeO₂ /Cu₂S/c-pSi) heterojunctions solar cell which are formed from two layers: the first was Cu₂S and the second was layer from tin oxide doped with two oxides named gallium oxide and cerium oxide with different doping ratios (0, 0.03, 0.05, and 0.07). The heterojuntion (SnO₂:5%Ga₂O₃ /Cu₂S/c-pSi photovoltaic structure exhibits open circuit voltage (V_oc) of 150mV, short circuit current (I_sc) of 15mA, fill factor of 0.622and efficiency of conversion of 2.8% under an intensity of illumination of 100mW/cm².