The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode

  • Hussein Kh. Rasheed Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq
  • Aseel A. Kareem Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq
Keywords: Metal semiconductor, Electrical properties, Polyimide, Schottky diode

Abstract

This research investigated the effectiveness of using different thickness values of polyimide (PI) interfacial layer in order to improve electrical and thermal properties of Al/ PI /c-Si capacitor. The PI spectra produced by poly(amic acid) (PAA) were characterized by using FT-IR analysis. After imidization of PAA, some absorption peaks vanished, whereas PI peaks appeared, due to the complete conversion of PAA to PI.

    The results show that thermal decomposition resistance of polyimide films increases with the increase of polyimide thickness, because of the increase of the imide bond and the decrease of the average distance between amide groups.

Published
2020-12-30
How to Cite
Rasheed, H. K., & Kareem, A. A. (2020). The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode. Iraqi Journal of Science, 61(12), 3235-3241. https://doi.org/10.24996/ijs.2020.61.12.12
Section
Physics