The Potential Barrier and Thermal Stability Dependence on PI Thickness of Al/PI/c-Si Schottky Diode

Hussein Kh.  Rasheed; Aseel A.  Kareem

doi:10.24996/ijs.2020.61.12.12

Authors

Hussein Kh. Rasheed Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq
Aseel A. Kareem Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq

DOI:

https://doi.org/10.24996/ijs.2020.61.12.12

Keywords:

Metal semiconductor, Electrical properties, Polyimide, Schottky diode

Abstract

This research investigated the effectiveness of using different thickness values of polyimide (PI) interfacial layer in order to improve electrical and thermal properties of Al/ PI /c-Si capacitor. The PI spectra produced by poly(amic acid) (PAA) were characterized by using FT-IR analysis. After imidization of PAA, some absorption peaks vanished, whereas PI peaks appeared, due to the complete conversion of PAA to PI.

The results show that thermal decomposition resistance of polyimide films increases with the increase of polyimide thickness, because of the increase of the imide bond and the decrease of the average distance between amide groups.