Temperature Dependence of AC Conductivity and Complex Dielectric Constant of Cd2Si1-xGexO4 Compound

Authors

  • Salma M. Shaban Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq

Keywords:

Cd alloys, Cd compounds, Si compounds, Powder Technology, a.c conductivity, Dielectric Properties

Abstract

In this work, samples of Cd2Si1-xGexO4 prepared by powder technology for (x = 0, 0.3, 0.6) were studied. The effect of (Ge) additives at different ratio of Ge (x=0, 0.3, 0.6) on the behavior of dielectric constant, dielectric loss and a,c conductivity were measured as a function of temperature at a selected frequencies (0.01 – 10) MHz in the temperature range 298 K to 473 K. The dielectric constant and dielectric loss obtained different behavior with the additives of (Ge). The activation energy for the electrical conduction process was studied.

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Published

2023-04-30

Issue

Section

Physics

How to Cite

Temperature Dependence of AC Conductivity and Complex Dielectric Constant of Cd2Si1-xGexO4 Compound. (2023). Iraqi Journal of Science, 56(2B), 1409-1415. https://ijs.uobaghdad.edu.iq/index.php/eijs/article/view/10116

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